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MT53E1G16D1ZW-046 AAT:C

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Part No	MT53E1G16D1ZW-046 AAT:C
Manufacturer	Micron Technology Inc.
Catalog	Memory
Description	LPDDR4 16GBIT 16 200/264 TFBGA 1
Datasheet	MT53E1G16D1ZW-046 AAT:C Datasheet
Sample
Rohs State
ECAD Module
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Win Source Part Number	WS1306985-MT53E1G16D1ZW-046 AAT:C
Category	Integrated Circuits (ICs) Memory Memory
Mfr	Micron Technology Inc.
Packaging	Tray
Part Status	Active
Memory Type	Volatile
Memory Format	DRAM
Technology	SDRAM - Mobile LPDDR4X
Memory Size	16Gbit
Memory Organization	1G x 16
Memory Interface	Parallel
SnapMagic 3D Model
Ultra Librarian 3D Model	Symbol, Footprint, 3D Model

Ultra-low-voltage core and I/O power supplies
VDD1 = 1.70–1.95V; 1.80V nominal
VDD2 = 1.06–1.17V; 1.10V nominal
VDDQ = 1.06–1.17V; 1.10V nominal or low VDDQ = 0.57–0.65V; 0.60V nominal
Frequency range
2133–10 MHz (data rate range: 4266–20 Mb/s per pin)
16n prefetch DDR architecture
8 internal banks per channel for concurrent operation
Single-data-rate CMD/ADR entry
Bidirectional/differential data strobe per byte lane
Programmable READ and WRITE latencies (RL/WL)
Programmable and on-the-fly burst lengths (BL = 16, 32)
Directed per-bank refresh for concurrent bank operation and ease of command scheduling
Up to 8.5 GB/s per die
On-chip temperature sensor to control self refresh rate
Partial-array self refresh (PASR)
Selectable output drive strength (DS)
Clock-stop capability
RoHS-compliant, “green” packaging
Programmable VSS (ODT) termination
Single-ended CK and DQS support
Improved tRFCab/tRFCpb = 280ns/140ns
AEC-Q100

24AA025E64-I/SN

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