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Same model may have multiple batches, images only for reference.
TP65H035G4WS
Same model may have multiple batches, images only for reference.

TP65H035G4WS

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Part No TP65H035G4WS
Manufacturer Transforming Technologies, LLC
Catalog FETs - Single
Description GANFET N-CH 650V 46.5A TO247-3
Datasheet
TP65H035G4WS Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1306402-TP65H035G4WS
Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr Transphorm
Packaging Tube
Part Status Active
FET Type N-Channel
Technology GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 46.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 41mOhm @ 30A, 10V
Ultra Librarian 3D Model   Symbol, Footprint, 3D Model

Description

  • JEDEC qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design, defined by 
    Wide gate safety margin
    Transient over-voltage capability
  • Enhanced inrush current capability 
  • Very low QRR
  • Reduced crossover loss

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Shipped from HK warehouse
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