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Same model may have multiple batches, images only for reference.
TRS6A65F,S1Q
Same model may have multiple batches, images only for reference.

TRS6A65F,S1Q

Part No TRS6A65F,S1Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Diodes, Rectifiers - Single
Description DIODE SIL CARBIDE 650V 6A TO220F
Datasheet
TRS6A65F,S1Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue

Win Source Part Number WS1307296-TRS6A65F,S1Q
Category Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Mfr Toshiba Semiconductor and Storage
Packaging Tube
Part Status Active
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 6A
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 6 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns

Description

  • Chip design of 2nd generation 
  • High non-repetitive peak forward surge current: IFSM = 52 A 
  • Low junction capacitance: C j = 22 pF (typ.)
  • Low reverse current: I R = 0.3 µA (typ.) 
  • Isolation package: TO-220F-2L

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