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Same model may have multiple batches, images only for reference.
TRS6A65F,S1Q
Same model may have multiple batches, images only for reference.

TRS6A65F,S1Q

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Part No TRS6A65F,S1Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Diodes, Rectifiers - Single
Description DIODE SIL CARBIDE 650V 6A TO220F
Datasheet
TRS6A65F,S1Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1307296-TRS6A65F,S1Q
Category Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Mfr Toshiba Semiconductor and Storage
Packaging Tube
Part Status Active
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 6A
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 6 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Ultra Librarian 3D Model   Symbol, Footprint, 3D Model

Description

  • Chip design of 2nd generation 
  • High non-repetitive peak forward surge current: IFSM = 52 A 
  • Low junction capacitance: C j = 22 pF (typ.)
  • Low reverse current: I R = 0.3 µA (typ.) 
  • Isolation package: TO-220F-2L

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Shipped from HK warehouse
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