MT25QU128ABA1EW7-0SIT TR

Quick Quote
Part No MT25QU128ABA1EW7-0SIT TR
Manufacturer Micron Technology Inc.
Catalog Memory
Description IC FLASH 128MBIT SPI 8WPDFN
Datasheet
Sample
Rohs State rohs
ECAD Module
Need Help

Products specifications Report Issue?

Win Source Part Number WS1306780-MT25QU128ABA1EW7-0SIT TR
Category Integrated Circuits (ICs) Memory Memory
Mfr Micron Technology Inc.
Packaging Tape & Reel (TR) Cut Tape (CT)
Part Status Active
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 128Mbit
Memory Organization 16M x 8
Memory Interface SPI - Quad I/O
Ultra Librarian 3D Model   Symbol, Footprint, 3D Model

Description

  • SPI-compatible serial bus interface
  • Single and double transfer rate (STR/DTR) 
  • Clock frequency
    1.166 MHz (MAX) for all protocols in STR
    2.90 MHz (MAX) for all protocols in DTR 
  • Dual/quad I/O commands for increased throughput up to 90 MB/s 
  • Supported protocols in both STR and DTR 
    1.Extended I/O protocol 
    2.Dual I/O protocol 
    3.Quad I/O protocol 
  • Execute-in-place (XIP)
  • PROGRAM/ERASE SUSPEND operations 
  • Volatile and nonvolatile configuration settings 
  • Software reset 
  • Additional reset pin for selected part numbers 
  • Dedicated 64-byte OTP area outside main memory 
    1.Readable and user-lockable
    2.Permanent lock with PROGRAM OTP command
  • Erase capability 
    1.Bulk erase
    2.Sector erase 64KB uniform granularity
    3.Subsector erase 4KB, 32KB granularity
  • Security and write protection 
    1.Volatile and nonvolatile locking and software write protection for each 64KB sector
    2.Nonvolatile configuration locking 
    3.Password protection 
    4.Hardware write protection: nonvolatile bits (BP[3:0] and TB) define protected area size 
    5.Program/erase protection during power-up
    6.CRC detects accidental changes to raw data 
  • Electronic signature
    1.JEDEC-standard 3-byte signature (BB18h) 
    2.Extended device ID: two additional bytes identify device factory options
  • JESD47H-compliant
    1. Minimum 100,000 ERASE cycles per sector
    2.Data retention: 20 years (TYP)

You May Also Be Interested in

ISSI, Integrated Silicon Solution Inc
IC DRAM 8GBIT PARALLEL 78TWBGA
Lowest to $18.4640
Alliance Memory, Inc.
IC DRAM 4GBIT PARALLEL 134FBGA
Lowest to $85.7990
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8SOIC
Lowest to $0.6320
Macronix
MEMORY
Need more? Email Us
ISSI, Integrated Silicon Solution Inc
16Mb QSPI, 8-pin SOP 150Mil, RoH
Lowest to $0.7540
ISSI, Integrated Silicon Solution Inc
IC DRAM 2GBIT PAR 96TWBGA
Need more? Email Us
Micron Technology Inc.
IC DRAM 512MBIT PAR 134VFBGA
Lowest to $43.2780
ON Semiconductor
IC EEPROM 1MBIT SPI 8SOIC / Memory IC
Lowest to $2.2610
ISSI, Integrated Silicon Solution Inc
IC DRAM 4GBIT PARALLEL 200VFBGA
Lowest to $28.2610
Availability:
Check Expected Leadtime Products

Shipping Information

Shipped from HK warehouse
Expected Shipping Date Ask for an estimation

Contact Us

*
*
*

FRAUD PREVENTION REMINDERS

Recently, We have discovered that criminals falsely claimed to be WIN SOURCE to commit fraud. Please note that the only official website & email suffix are win-source.group, win-source.net, winsourcectl.com and winsourceelec.com

More details about fraud prevention
RFQ RFQ RFQ BOM BOM BOM API API API Sell Sell Sell your Excess