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Same model may have multiple batches, images only for reference.
MT25QU128ABA1EW7-0SIT TR
Same model may have multiple batches, images only for reference.

MT25QU128ABA1EW7-0SIT TR

Part No MT25QU128ABA1EW7-0SIT TR
Manufacturer Micron Technology Inc.
Catalog Memory
Description IC FLASH 128MBIT SPI 8WPDFN
Datasheet
MT25QU128ABA1EW7-0SIT TR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue

Win Source Part Number WS1306780-MT25QU128ABA1EW7-0SIT TR
Category Integrated Circuits (ICs) Memory Memory
Mfr Micron Technology Inc.
Packaging Tape & Reel (TR) Cut Tape (CT)
Part Status Active
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 128Mbit
Memory Organization 16M x 8
Memory Interface SPI - Quad I/O

Description

  • SPI-compatible serial bus interface
  • Single and double transfer rate (STR/DTR) 
  • Clock frequency
    1.166 MHz (MAX) for all protocols in STR
    2.90 MHz (MAX) for all protocols in DTR 
  • Dual/quad I/O commands for increased throughput up to 90 MB/s 
  • Supported protocols in both STR and DTR 
    1.Extended I/O protocol 
    2.Dual I/O protocol 
    3.Quad I/O protocol 
  • Execute-in-place (XIP)
  • PROGRAM/ERASE SUSPEND operations 
  • Volatile and nonvolatile configuration settings 
  • Software reset 
  • Additional reset pin for selected part numbers 
  • Dedicated 64-byte OTP area outside main memory 
    1.Readable and user-lockable
    2.Permanent lock with PROGRAM OTP command
  • Erase capability 
    1.Bulk erase
    2.Sector erase 64KB uniform granularity
    3.Subsector erase 4KB, 32KB granularity
  • Security and write protection 
    1.Volatile and nonvolatile locking and software write protection for each 64KB sector
    2.Nonvolatile configuration locking 
    3.Password protection 
    4.Hardware write protection: nonvolatile bits (BP[3:0] and TB) define protected area size 
    5.Program/erase protection during power-up
    6.CRC detects accidental changes to raw data 
  • Electronic signature
    1.JEDEC-standard 3-byte signature (BB18h) 
    2.Extended device ID: two additional bytes identify device factory options
  • JESD47H-compliant
    1. Minimum 100,000 ERASE cycles per sector
    2.Data retention: 20 years (TYP）

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