GB01SLT12-252

Part No GB01SLT12-252
Manufacturer GeneSiC Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE SIL CARBIDE 1.2KV 1A TO252
Sample
Rohs State rohs
ECAD Module
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Alternative Parts
(Cross-Reference)
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Manufacturer GeneSiC Semiconductor
Category Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Part Status Obsolete
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 1 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 2 µA @ 1200 V
Capacitance @ Vr, F 69pF @ 1V, 1MHz
Mounting Type Surface Mount
Win Source Part Number WS1305551-GB01SLT12-252

Description

Features
• Low V for High Temperature Operation
• Enhanced Surge and Avalanche Robustness
• Superior Figure of Merit Q /I
• Low Thermal Resistance
• Low Reverse Leakage Current
• Temperature Independent Fast Switching
• Positive Temperature Coefficient of V
• High dV/dt Ruggedness

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