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SQM120P10_10M1LGE3

Name: SQM120P10_10M1LGE3
Brand: Vishay
SKU: 1201601
Availability: InStock
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Part No	SQM120P10_10M1LGE3
Manufacturer	Vishay
Catalog	Transistors
Description	MOSFETs P Ch -100Vds 20Vgs
Sample
Rohs State
ECAD Module
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Manufacturer	Vishay
Technology	Si
Mounting Style	SMD/SMT
Package / Case	D2PAK-3 (TO-263-3)
Transistor Polarity	P-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	120 A
Rds On - Drain-Source Resistance	8.1 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2.5 V
Qg - Gate Charge	190 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	375 W
Channel Mode	Enhancement
Qualification	AEC-Q101
Tradename	TrenchFET
Series	SQM
Packaging	Tube
Configuration	Single
Height	4.83 mm
Length	10.67 mm
Transistor Type	1 P-Channel
Width	9.65 mm
Brand	Vishay Semiconductors
Forward Transconductance - Min	60 S
Fall Time	200 ns
Product Type	MOSFETs
Rise Time	100 ns
Standard Pack Qty	800
Subcategory	Transistors
Typical Turn-Off Delay Time	120 ns
Typical Turn-On Delay Time	20 ns
SnapMagic 3D Model
Ultra Librarian 3D Model	Symbol, Footprint, 3D Model

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SQM120P10_10M1LGE3

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